MOSFET N-CH 30V 11A 8SO IRF7807Z
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Description:
MOSFET N-CH 30V 11A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF7807Z(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory40483,Price reference "real-time change" China/Hongkong。 IRF7807Z package/specs, Download IRF7807Z、Datasheet。