IRFU3710ZPBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRFU3710ZPBF

Description:

MOSFET N-CH 100V 42A IPAK

Stock:

27916

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

42A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

100 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

2930 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

18 mΩ @ 33A,10V

Power dissipation (maximum)

140W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

pipe

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

IPAK(TO-251AA)

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

IRFU3710ZPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory27916,Price reference "real-time change" China/Hongkong。 IRFU3710ZPBF package/specs, Download IRFU3710ZPBF、Datasheet。