IRLL2703PBF parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ IRLL2703PBF

The pictures are for reference only

Brand:

Infineon

Model:

IRLL2703PBF

Description:

MOSFET N-CH 30V 3.9A SOT223

Stock:

42884

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

3.9A(Ta)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

14 nC @ 5 V

Input capacitance at different Vds (Ciss) (maximum)

530 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

45 mΩ @ 3.9A,10V

Power dissipation (maximum)

1W(Ta)

Vgs (max)

±16V

Vgs (th) (maximum) for different Ids

2.4V @ 250µA

packing

pipe

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-223

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

IRLL2703PBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42884,Price reference "real-time change" China/Hongkong。 IRLL2703PBF package/specs, Download IRLL2703PBF、Datasheet。