IPB065N15N3GE8187ATMA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPB065N15N3GE8187ATMA1

Description:

MOSFET N-CH 150V 130A TO263-7

Stock:

98058

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

130A(Tc)

Drain source voltage (Vdss)

150 V

Drive voltage (maximum RdsOn, minimum RdsOn)

8V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

93 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

7300 pF @ 75 V

On resistance (maximum) for different Ids and Vgs

6.5 mΩ @ 100A,10V

Power dissipation (maximum)

300W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 270µA

packing

TR,CT

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO263-7

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载IPB065N15N3GE8187ATMA1.pdf

IPB065N15N3GE8187ATMA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory98058,Price reference "real-time change" China/Hongkong。 IPB065N15N3GE8187ATMA1 package/specs, Download IPB065N15N3GE8187ATMA1、Datasheet。