MOSFET N-CH 150V 100A TO263-3 IPB072N15N3GE8187ATMA1
The pictures are for reference only
Model:
IPB072N15N3GE8187ATMA1
Description:
MOSFET N-CH 150V 100A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB072N15N3GE8187ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83106,Price reference "real-time change" China/Hongkong。 IPB072N15N3GE8187ATMA1 package/specs, Download IPB072N15N3GE8187ATMA1、Datasheet。