MOSFET N-CH 60V 90A TO252-3 IPD053N06N3GBTMA1
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Description:
MOSFET N-CH 60V 90A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD053N06N3GBTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory78322,Price reference "real-time change" China/Hongkong。 IPD053N06N3GBTMA1 package/specs, Download IPD053N06N3GBTMA1、Datasheet。