MOSFET P-CH 30V 70A TO252-3 IPD068P03L3GBTMA1
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Description:
MOSFET P-CH 30V 70A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD068P03L3GBTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30237,Price reference "real-time change" China/Hongkong。 IPD068P03L3GBTMA1 package/specs, Download IPD068P03L3GBTMA1、Datasheet。