IRF7834TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

IRF7834TRPBF

Description:

MOSFET N-CH 30V 19A 8SO

Stock:

78110

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.07

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Parameters

Current at 25 ° C - continuous drain (Id)

19A(Ta)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

44 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

3710 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

4.5 mΩ @ 19A,10V

Power dissipation (maximum)

2.5W(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.25V @ 250µA

packing

TR,bulk

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SO

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载IRF7834TRPBF.pdf

IRF7834TRPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory78110,Price reference "real-time change" China/Hongkong。 IRF7834TRPBF package/specs, Download IRF7834TRPBF、Datasheet。