MOSFET N-CH 100V 6.9A 8SO IRF7473PBF
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Description:
MOSFET N-CH 100V 6.9A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF7473PBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31074,Price reference "real-time change" China/Hongkong。 IRF7473PBF package/specs, Download IRF7473PBF、Datasheet。