MOSFET N-CH 30V 8.3A 8SO IRF7807VPBF
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Description:
MOSFET N-CH 30V 8.3A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF7807VPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20792,Price reference "real-time change" China/Hongkong。 IRF7807VPBF package/specs, Download IRF7807VPBF、Datasheet。