MOSFET N-CH 25V 50A TO263-3 IPB09N03LAT
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Description:
MOSFET N-CH 25V 50A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB09N03LAT(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22080,Price reference "real-time change" China/Hongkong。 IPB09N03LAT package/specs, Download IPB09N03LAT、Datasheet。