MOSFET N-CH 100V 35A TO263-3 SPB35N10T
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Description:
MOSFET N-CH 100V 35A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPB35N10T(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64483,Price reference "real-time change" China/Hongkong。 SPB35N10T package/specs, Download SPB35N10T、Datasheet。