MOSFET P-CH 100V 680MA SOT223-4 BSP316PE6327T
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Description:
MOSFET P-CH 100V 680MA SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSP316PE6327T(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44322,Price reference "real-time change" China/Hongkong。 BSP316PE6327T package/specs, Download BSP316PE6327T、Datasheet。