MOSFET P-CH 60V 1.9A SOT223-4 BSP170PE6327T
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Description:
MOSFET P-CH 60V 1.9A SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSP170PE6327T(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4898,Price reference "real-time change" China/Hongkong。 BSP170PE6327T package/specs, Download BSP170PE6327T、Datasheet。