IRF6668TR1PBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRF6668TR1PBF

Description:

MOSFET N-CH 80V 55A DIRECTFET MZ

Stock:

95144

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

55A(Tc)

Drain source voltage (Vdss)

80 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

31 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1320 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

15 mΩ @ 12A,10V

Power dissipation (maximum)

2.8W(Ta),89W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4.9V @ 100µA

packing

TR,CT

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

DIRECTFET™ MZ

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载IRF6668TR1PBF.pdf

IRF6668TR1PBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory95144,Price reference "real-time change" China/Hongkong。 IRF6668TR1PBF package/specs, Download IRF6668TR1PBF、Datasheet。