BSP320S E6433 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

BSP320S E6433

Description:

MOSFET N-CH 60V 2.9A SOT223-4

Stock:

29372

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

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Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

2.9A(Ta)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

12 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

340 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

120 mΩ @ 2.9A,10V

Power dissipation (maximum)

1.8W(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 20µA

packing

series

SIPMOS®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-SOT223-4

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载BSP320S E6433.pdf

BSP320S E6433（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory29372,Price reference "real-time change" China/Hongkong。 BSP320S E6433 package/specs, Download BSP320S E6433、Datasheet。