MOSFET N-CH 200V 660MA SOT223-4 BSP297 E6327
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Description:
MOSFET N-CH 200V 660MA SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSP297 E6327(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9121,Price reference "real-time change" China/Hongkong。 BSP297 E6327 package/specs, Download BSP297 E6327、Datasheet。