BSS169 E6906 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

BSS169 E6906

Description:

MOSFET N-CH 100V 170MA SOT23-3

Stock:

59360

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

170mA(Ta)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

0V,10V

FET Type

N channels

FET function

depletion mode

Gate charge (Qg) at different Vgs (maximum)

2.8 nC @ 7 V

Input capacitance at different Vds (Ciss) (maximum)

68 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

6 Ω @ 170mA,10V

Power dissipation (maximum)

360mW(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

1.8V @ 50µA

packing

series

SIPMOS®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-SOT23

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

BSS169 E6906（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59360,Price reference "real-time change" China/Hongkong。 BSS169 E6906 package/specs, Download BSS169 E6906、Datasheet。