MOSFET N-CH 55V 25A TO263-3 IPB25N06S3-25
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Description:
MOSFET N-CH 55V 25A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB25N06S3-25(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory63028,Price reference "real-time change" China/Hongkong。 IPB25N06S3-25 package/specs, Download IPB25N06S3-25、Datasheet。