MOSFET N-CH 100V 95A TO220-3 IPP08CN10N G
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Description:
MOSFET N-CH 100V 95A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPP08CN10N G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3691,Price reference "real-time change" China/Hongkong。 IPP08CN10N G package/specs, Download IPP08CN10N G、Datasheet。