MOSFET N-CH 55V 80A TO262-3 IPI80N06S3-05
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Description:
MOSFET N-CH 55V 80A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI80N06S3-05(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35144,Price reference "real-time change" China/Hongkong。 IPI80N06S3-05 package/specs, Download IPI80N06S3-05、Datasheet。