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    Home/    Category/    MOSFET/    IPU10N03LA

    MOSFET N-CH 25V 30A TO251-3 IPU10N03LA

    IPU10N03LA image
    The pictures are for reference only
    Brand:
    Infineon
    Model:
    IPU10N03LA
    Description:
    MOSFET N-CH 25V 30A TO251-3
    Stock:
    7470
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    30A(Tc)
  • Drain source voltage (Vdss)
    25 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    11 nC @ 5 V
  • Input capacitance at different Vds (Ciss) (maximum)
    1358 pF @ 15 V
  • On resistance (maximum) for different Ids and Vgs
    10.4 mΩ @ 30A,10V
  • Power dissipation (maximum)
    52W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    2V @ 20µA
  • packing
    pipe
  • series
    OptiMOS™
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    P-TO251-3-1
  • Country of origin
    Germany
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
    • PDFicoDataSheet
    IPU10N03LA（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7470,Price reference "real-time change" China/Hongkong。 IPU10N03LA package/specs, Download IPU10N03LA、Datasheet。
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