MOSFET COOL MOS 600V SAWED WAFER SIPC26N80C3
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Description:
MOSFET COOL MOS 600V SAWED WAFER
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SIPC26N80C3(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15999,Price reference "real-time change" China/Hongkong。 SIPC26N80C3 package/specs, Download SIPC26N80C3、Datasheet。