MOSFET N-CH 30V 8.3A 8SO IRF7807VTRPBF
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Description:
MOSFET N-CH 30V 8.3A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF7807VTRPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24866,Price reference "real-time change" China/Hongkong。 IRF7807VTRPBF package/specs, Download IRF7807VTRPBF、Datasheet。