MOSFET N-CH 100V 10.3A TO262-3 SPI10N10L
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Description:
MOSFET N-CH 100V 10.3A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPI10N10L(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39205,Price reference "real-time change" China/Hongkong。 SPI10N10L package/specs, Download SPI10N10L、Datasheet。