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MOSFET N-CH 600V 11A TO262-3 SPI11N60S5BKSA1

SPI11N60S5BKSA1 image
The pictures are for reference only
Brand:
Model:
SPI11N60S5BKSA1
Description:
MOSFET N-CH 600V 11A TO262-3
Stock:
25423
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    11A(Tc)
  • Drain source voltage (Vdss)
    600 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    54 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    1460 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    380 mΩ @ 7A,10V
  • Power dissipation (maximum)
    125W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    5.5V @ 500µA
  • packing
    pipe
  • series
    CoolMOS™
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    PG-TO262-3-1
  • Country of origin
    Germany
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
  • PDFicoDataSheet
    SPI11N60S5BKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25423,Price reference "real-time change" China/Hongkong。 SPI11N60S5BKSA1 package/specs, Download SPI11N60S5BKSA1、Datasheet。
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