SPI11N60S5BKSA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

SPI11N60S5BKSA1

Description:

MOSFET N-CH 600V 11A TO262-3

Stock:

25423

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

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Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

11A(Tc)

Drain source voltage (Vdss)

600 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

54 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1460 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

380 mΩ @ 7A,10V

Power dissipation (maximum)

125W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

5.5V @ 500µA

packing

pipe

series

CoolMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-TO262-3-1

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

下载SPI11N60S5BKSA1.pdf

SPI11N60S5BKSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25423,Price reference "real-time change" China/Hongkong。 SPI11N60S5BKSA1 package/specs, Download SPI11N60S5BKSA1、Datasheet。