IRF7322D1TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRF7322D1TRPBF

Description:

MOSFET P-CH 20V 5.3A 8SO

Stock:

84059

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

5.3A(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

2.7V,4.5V

FET Type

P channels

FET function

Schottky diode (isolated)

Gate charge (Qg) at different Vgs (maximum)

29 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

780 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

62 mΩ @ 2.9A,4.5V

Power dissipation (maximum)

2W(Ta)

Vgs (max)

±12V

Vgs (th) (maximum) for different Ids

700mV @ 250µA

packing

TR,CT

series

FETKY™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SO

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRF7322D1TRPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory84059,Price reference "real-time change" China/Hongkong。 IRF7322D1TRPBF package/specs, Download IRF7322D1TRPBF、Datasheet。