MOSFET N-CH 600V 1.8A TO220-3 SPP02N60S5HKSA1
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Description:
MOSFET N-CH 600V 1.8A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPP02N60S5HKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11527,Price reference "real-time change" China/Hongkong。 SPP02N60S5HKSA1 package/specs, Download SPP02N60S5HKSA1、Datasheet。