MOSFET N-CH 650V 6.2A TO220-3 SPP06N60C3HKSA1
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Description:
MOSFET N-CH 650V 6.2A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPP06N60C3HKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68589,Price reference "real-time change" China/Hongkong。 SPP06N60C3HKSA1 package/specs, Download SPP06N60C3HKSA1、Datasheet。