MOSFET N-CH 100V 10.5A TO251-3 SPU11N10
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Description:
MOSFET N-CH 100V 10.5A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPU11N10(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15387,Price reference "real-time change" China/Hongkong。 SPU11N10 package/specs, Download SPU11N10、Datasheet。