MOSFET P-CH 60V 2.9A SOT223-4 BSP613PL6327HUSA1
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Description:
MOSFET P-CH 60V 2.9A SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSP613PL6327HUSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18999,Price reference "real-time change" China/Hongkong。 BSP613PL6327HUSA1 package/specs, Download BSP613PL6327HUSA1、Datasheet。