MOSFET N-CH 55V 100A TO263-3 IPB100N06S3L-04
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Description:
MOSFET N-CH 55V 100A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB100N06S3L-04(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory45203,Price reference "real-time change" China/Hongkong。 IPB100N06S3L-04 package/specs, Download IPB100N06S3L-04、Datasheet。