MOSFET N-CH 200V 3.4A DIRECTFET IRF6785MTR1PBF
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Description:
MOSFET N-CH 200V 3.4A DIRECTFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF6785MTR1PBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory73663,Price reference "real-time change" China/Hongkong。 IRF6785MTR1PBF package/specs, Download IRF6785MTR1PBF、Datasheet。