MOSFET N-CH 100V 100A TO220-3 IPP04CN10NG
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Description:
MOSFET N-CH 100V 100A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPP04CN10NG(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23280,Price reference "real-time change" China/Hongkong。 IPP04CN10NG package/specs, Download IPP04CN10NG、Datasheet。