MOSFET P-CH 20V 5.1A 4FLIPFET IRF6100PBF
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Description:
MOSFET P-CH 20V 5.1A 4FLIPFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF6100PBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33447,Price reference "real-time change" China/Hongkong。 IRF6100PBF package/specs, Download IRF6100PBF、Datasheet。