MOSFET N-CH 550V 13A TO263-3 IPB50R250CPATMA1
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Description:
MOSFET N-CH 550V 13A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB50R250CPATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83754,Price reference "real-time change" China/Hongkong。 IPB50R250CPATMA1 package/specs, Download IPB50R250CPATMA1、Datasheet。