MOSFET N-CH 550V 9A TO252-3 IPD50R399CP
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Description:
MOSFET N-CH 550V 9A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD50R399CP(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory89859,Price reference "real-time change" China/Hongkong。 IPD50R399CP package/specs, Download IPD50R399CP、Datasheet。