MOSFET N-CH 55V 80A TO252-3 IPD80N06S3-09
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Description:
MOSFET N-CH 55V 80A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD80N06S3-09(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory27109,Price reference "real-time change" China/Hongkong。 IPD80N06S3-09 package/specs, Download IPD80N06S3-09、Datasheet。