MOSFET N-CH 60V 120A TO262-3 IPI024N06N3GHKSA1
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Description:
MOSFET N-CH 60V 120A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI024N06N3GHKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39773,Price reference "real-time change" China/Hongkong。 IPI024N06N3GHKSA1 package/specs, Download IPI024N06N3GHKSA1、Datasheet。