MOSFET N-CH 80V 80A TO262-3 IPI057N08N3 G
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Description:
MOSFET N-CH 80V 80A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI057N08N3 G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71335,Price reference "real-time change" China/Hongkong。 IPI057N08N3 G package/specs, Download IPI057N08N3 G、Datasheet。