MOSFET N-CH 100V 100A TO262-3 IPI06CN10N G
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Description:
MOSFET N-CH 100V 100A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI06CN10N G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31662,Price reference "real-time change" China/Hongkong。 IPI06CN10N G package/specs, Download IPI06CN10N G、Datasheet。