MOSFET N-CH 85V 67A TO262-3 IPI12CNE8N G
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Description:
MOSFET N-CH 85V 67A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI12CNE8N G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory27013,Price reference "real-time change" China/Hongkong。 IPI12CNE8N G package/specs, Download IPI12CNE8N G、Datasheet。