MOSFET N-CH 650V 1.8A TO251-3 SPS02N60C3
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Description:
MOSFET N-CH 650V 1.8A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPS02N60C3(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory51449,Price reference "real-time change" China/Hongkong。 SPS02N60C3 package/specs, Download SPS02N60C3、Datasheet。