MOSFET N-CH 55V 19A TO252-3 IPD15N06S2L64ATMA1
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Description:
MOSFET N-CH 55V 19A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD15N06S2L64ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory47291,Price reference "real-time change" China/Hongkong。 IPD15N06S2L64ATMA1 package/specs, Download IPD15N06S2L64ATMA1、Datasheet。