MOSFET N-CH 30V 11A 8SO IRF8707GPBF
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Description:
MOSFET N-CH 30V 11A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF8707GPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory81872,Price reference "real-time change" China/Hongkong。 IRF8707GPBF package/specs, Download IRF8707GPBF、Datasheet。