MOSFET N-CH 60V 120A TO262-3 IPI120N06S4H1AKSA1
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Description:
MOSFET N-CH 60V 120A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI120N06S4H1AKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93502,Price reference "real-time change" China/Hongkong。 IPI120N06S4H1AKSA1 package/specs, Download IPI120N06S4H1AKSA1、Datasheet。