MOSFET N-CH 100V 75A TO251-3 IPS118N10N G
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Description:
MOSFET N-CH 100V 75A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPS118N10N G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory38194,Price reference "real-time change" China/Hongkong。 IPS118N10N G package/specs, Download IPS118N10N G、Datasheet。