MOSFET N-CH 60V 120A D2PAK IPB021N06N3GATMA1
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Description:
MOSFET N-CH 60V 120A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB021N06N3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65124,Price reference "real-time change" China/Hongkong。 IPB021N06N3GATMA1 package/specs, Download IPB021N06N3GATMA1、Datasheet。