MOSFET N-CH 100V 4.2A DIRECTFET IRF6665TR1
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Description:
MOSFET N-CH 100V 4.2A DIRECTFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF6665TR1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49599,Price reference "real-time change" China/Hongkong。 IRF6665TR1 package/specs, Download IRF6665TR1、Datasheet。