MOSFET N-CH 30V 17.2A 8SO IRF8113GPBF
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Description:
MOSFET N-CH 30V 17.2A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF8113GPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory84110,Price reference "real-time change" China/Hongkong。 IRF8113GPBF package/specs, Download IRF8113GPBF、Datasheet。